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1 n- and p-channel v (d-s) mosfet feature s ? halogen-free ? t renchfet ? power mosfet ? 100 % r g test ed ? 100 % uis tested applications ? b acklight inverter for lcd display ? full bridge converter product s u mmary v ds (v) r ds(on) ( : ) i d (a) a q g (t yp. ) n-channel 30 0.024 at v gs = 10 v 6.7 5.3 0 .036 at v gs = 4 . 5 v 6.2 p-channel - 30 0.048 at v gs = - 10 v - 6 .0 11.8 0.058 at v gs = - 4.5 v - 5.0 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 t op v iew 2 3 4 1 n-channel mosfet d 1 g 1 s 1 s 2 g 2 d 2 p-channel mosfet notes: a. based on t c = 2 5 c. b. surfa ce mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 120 c /w. absolute maximum ratings t a = 25 c, unless otherwise noted p a ramete r s ymbol n-channel p-channel unit drain-source voltage v ds 30 - 30 v gat e-source v oltage v gs 2 0 contin uous drain current (t j = 150 c ) t c = 25 c i d 6.7 - 6.0 a t c = 70 c 5.4 - 4.7 t a = 25 c 5.6 b, c - 4.7 b, c t a = 70 c 4.4 b, c - 3.7 b, c pulsed dr a in current i dm 20 - 20 source-drain c urrent diode current t c = 25 c i s 2.5 - 2.5 t a = 25 c 1.6 b, c - 1.6 b, c pulsed source-dr a in current i sm 20 - 20 single pulse a valanche current l = 0 1 mh i as 7- 1 0 single pulse a valanche energ y e as 2.45 5 m j maxi mum power dissipation t c = 25 c p d 3.0 3.1 w t c = 70 c 1.9 2 t a = 25 c 2.0 b, c 2.0 b, c t a = 70 c 1.25 b, c 1.25 b, c ope r ating junction and storage temperature range t j , t stg - 55 to 1 5 0 c thermal resist ance ratings p arameter symbol n-c hannel p-channel unit typ. max. typ. max. maximum junction-to-ambient b, d t d 10 s r th j a 54 64 49 62.5 c/w maximum junction-to-foot (drain) steady state r thj f 33 42 30 40 rohs compliant zzzglqwhnms '7 0
2 specif ications t j = 25 c, unless otherwise noted p aram e ter symb ol test conditions min. typ. a max. un it static drain-source breakdo wn v olta ge v ds v gs = 0 v , i d = 250 a n-ch 30 v v gs = 0 v , i d = - 250 a p-ch - 30 v ds t emperature coefficient ' v ds /t j i d = 250 a n-ch 44 mv/c i d = - 250 a p-ch - 4 2 v gs( th) t emperature coefficient ' v gs( th) /t j i d = 250 a n-ch - 5.5 ii d = - 2 50 a p-ch 4.6 gate th reshold voltage v gs( t h) v ds = v gs , i d = 250 a n- ch 1.4 3.0 v v ds = v gs , i d = - 250 a p-ch - 1.2 - 2.5 gate-body leakage i gss v ds = 0 v , v gs = 20 v n- ch 100 na p-ch - 100 zero gate v oltage drain current i dss v ds = 30 v , v gs = 0 v n- ch 1 a v ds = - 30 v, v gs = 0 v p-ch - 1 v ds = 3 0 v , v gs = 0 v , t j = 55 c n- ch 10 v ds = - 30 v , v gs = 0 v , t j = 55 c p-ch - 10 on-state dr ain current b i d( on) v ds = 5 v , v gs = 10 v n- ch 10 a v ds = - 5 v , v gs = - 10 v p-ch - 10 drain-source on-state re sistance b r ds( on ) v gs = 10 v , i d = 5 a n-ch 0.0195 0.024 : v gs = - 10 v , i d = - 5 a p-ch 0.037 0.048 v gs = 4.5 v , i d = 4 a n-ch 0.0255 0.036 v gs = - 4.5 v , i d = - 4 a p-ch 0.040 0.058 f orw ard transconductance b g fs v ds = 15 v, i d = 5 a n- ch 22 s v ds = - 15 v, i d = - 5 a p-ch 14 dy nami c a inpu t capacitan ce c iss n -chan nel v ds = 20 v , v gs = 0 v , f = 1 mhz p-channel v ds = - 20 v, v gs = 0 v , f = 1 mhz n- ch 640 pf p-ch 970 output capacitance c oss n- ch 73 p-ch 120 rev erse transfer capacitance c rs s n- ch 41 p-ch 95 to tal gate charge q g v ds = 20 v , v gs = 10 v , i d = 5 a n- ch 11.7 20 nc v ds = - 20 v, v gs = - 10 v , i d = - 5 a p-ch 25 38 n-channel v ds = 20 v, v gs = 4. 5 v i d = 5 a p-channel v ds = - 20 v , v gs = - 4.5 v , i d = - 5 a n-ch 5.3 9 p-ch 11.8 18 gate-source charge q gs n- ch 1.9 p-ch 3.0 gate-dr ain charge q gd n- ch 1.7 p-ch 5.2 ga te re sistance r g f = 1 mhz n- ch 0.5 2.2 4.5 : p-ch 1.0 5.5 11 zzzglqwhnms '7 0
3 notes: a. guara nteed by design, n ot subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 % . stresses beyond t hose listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted paramet e r sym bo l t est conditions min. typ. a max. un it dynamic a tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 20 v, r l = 4 i d ? 5 a, v gen = 10 v, r g = 1 p-channel v dd = - 20 v , r l = 4 i d ? - 5 a, v gen = - 10 v, r g = 1 n-ch 7 1 4 ns p-ch 7 14 rise time t r n-ch 10 20 p-ch 12 24 t urn-off delay time t d(off) n-ch 15 30 p-ch 30 60 fa ll time t f n-ch 9 1 8 p-ch 9 18 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 20 v, r l = 4 i d ? 5 a, v gen = 4.5 v, r g = 1 p-channel v dd = - 20 v, r l = 4 i d ? - 5 a, v gen = - 4.5 v, r g = 1 n-ch 16 30 p-ch 44 80 rise t ime t r n-ch 17 30 p-ch 33 50 t urn-off delay time t d(off) n-ch 16 30 p-ch 28 60 fa ll time t f n-ch 10 20 p-ch 13 25 drain-sou r ce body diode characteristics continuous source-drain diode current i s t c = 25 c n-ch 2. 5 a p-ch - 2.5 pulse diode f orward current a i sm n-c h 20 p-ch - 20 body dio de v oltage v sd i s = 1.6 a n-ch 0.7 8 1.2 v i s = - 1.6 a p-ch - 0.76 - 1.2 body dio de re verse recovery time t rr n-channel i f = 2 a, di/dt = 100 a/s, t j = 25 c p-channel i f = - 2 a, di/dt = - 100 a/s, t j = 25 c n-ch 19 30 ns p-ch 26 50 body diode reverse recovery charge q rr n-c h 14 25 nc p-ch 18 .5 35 reverse recovery fall time t a n-ch 13 ns p-ch 12 .5 reverse recovery rise time t b n-c h 6 p-ch 13 .5 www.din-tek.jp dt m4 606
4 n-c han nel typic a l characteristics 25 c, unless otherwise noted output ch aracteristics on-resistance vs. drain current gate charge 0 6 12 1 8 24 30 0.0 0 .5 1.0 1.5 2.0 2.5 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10th r u 5 v 3 v 4 v 0.020 0.02 8 0.036 0.044 0.052 0.060 0612 1 8 24 30 - on-resistance ( ) r ds(on ) i d - drain c u rrent (a) v gs =4.5 v v gs =10 v 0 2 4 6 8 10 0.0 2.5 5.0 7.5 10.0 12.5 i d =5a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =1 0 v v ds =20 v v ds =30 v transfer characteristics cap acita nce on-resistance vs. junction temperature 0 1 2 3 4 5 01 23 45 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c =25 c t c = - 55 c t c = 125 c c rss 0 160 320 4 8 0 640 8 00 0 6 12 1 8 24 30 c oss c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) i d =5a v gs =10 v v gs =4.5 v www.din-tek.jp dt m4 606
5 n - c h annel typical characteristics 25 c, unless otherwise noted source- drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c - 0. 8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) i d =5ma on-res istance vs. gate-to-source voltage single pulse power, junction-to-ambient 0 0.04 0.0 8 0.12 0.16 0.20 0 246 8 10 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t a = 25 c t a = 125 c i d =5a 0 32 4 8 64 8 0 0 1 1 1 00. 00 . 0 1 time (s) po w er ( w ) 0.1 16 safe operating area, jun ction-to-ambient v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 1ms - drain c u rrent (a) i d 0.1 t a = 25 c single p u lse dc 1s 10 s limited b yr ds(on) * 10 ms 100 ms www.din-tek.jp dt m4 606
6 n-c han nel typic a l characteristics 25 c, unless otherwise noted * t h e power dissipation p d is ba se d on t j(max) = 1 50 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 5 6 8 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) 4 powe r deratin g, junction-to-foot 0 0. 8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) power d e rating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a -am b ient t emperat u re (c) po w er ( w ) www.din-tek.jp dt m4 606
7 n - c h annel typical characteristics 25 c, unless otherwise noted norma lized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e t ransient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =12 0 c/ w 3. t jm - t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cy c le = 0.5 nor malized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty c ycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e t ransient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse www.din-tek.jp dt m4 606
8 p- ch annel ty pi cal characteristics 25 c, unless otherwise noted output ch aracteristics on-r esistance vs. drain current gate charge 0 6 12 1 8 24 30 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10th r u 5 v v gs =4 v v gs =3 v v ds - drain- to -so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.02 0.04 0.06 0.0 8 0.10 0 6 12 1 8 24 30 v gs =4.5 v v gs =10 v - on-r esistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0.0 5.1 10.2 15.3 20.4 25.5 v ds =30 v i d =5a v ds =10 v v ds =20 v - gate- to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfe r characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 0123 45 t c = 25 c t c = 125 c t c = - 55 c v gs - gate - to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 320 640 960 12 8 0 1600 0.0 2.4 4. 8 7.2 9.6 12.0 c iss c oss v ds - drain- to -so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 i d =5a v gs =4. 5 v v gs =10 v t j -j u nction temperat u re (c) ( n ormalized) - on-r esistance r ds(on) www.din-tek.jp dt m4 606
9 p-channe l typical characteristics 25 c, unless otherwise noted source-drain di ode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s - 0.4 - 0.2 0.0 0.2 0.4 0.6 0. 8 - 50 - 25 0 2 5 50 75 100 125 150 i d = 250 a i d =1ma v ariance ( v ) v gs(th) t j - t emperat u re (c) on -res istan ce vs. gate-to -source voltage single pulse power, junction-to-ambient 0.00 0.04 0.0 8 0.12 0.16 0.20 01234567 8 91 0 t j = 25 c t j = 125 c i d =5a - on-r esistance ( ) r ds(on) v gs - gate - to-so u rce v oltage ( v ) 0 10 20 30 40 50 01 1 1 00. 00 . 0 1 0.1 time (s) po w er ( w ) safe operating area, jun ction-to-ambient 100 1 0 0 1 01 1 10.0 0.01 10 0.1 0.1 1ms t c = 25 c sin g le p u lse 10 ms 100 ms dc 1s limi ted b yr ds(on) * 10 s v ds - drain- to -so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d www.din-tek.jp dt m4 606
10 p- ch annel ty pi cal characteristics 25 c, unless otherwise noted * t h e power dissipation p d is ba se d on t j(max) = 1 50 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0.0 1.4 2. 8 4.2 5.6 7.0 0 25507 5100125150 t c - case t emperat u re (c) i d - drain c u rrent (a) powe r deratin g, junction-to-foot 0.0 0. 8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 t c - case t emperat u re (c) po w er ( w ) power d e rating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 255 07 5100125150 t a -am b ient t emperat u re (c) po w er ( w ) www.din-tek.jp dt m4 606
11 p-channe l typical characteristics 25 c, unless otherwise noted norma lized thermal transient impedance, junction-to-ambient 0.2 0.1 0.05 0.02 sing le p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thj a =12 0 c/ w 3. t jm -t a =p dm z thj a (t) t 1 t 2 4. s u rf ace mo u nted d u ty cyc l e = 0.5 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 sq u are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 0.1 0.01 1 nor malized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 0.05 0.02 single p u ls e d u ty cyc l e = 0.5 sq u are w a v ep u lse d u ration (s) n ormali z ed effecti v e transient thermal impedance 1 0.1 0.01 www.din-tek.jp dt m4 606
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
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